GSM7412
MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM7412
Marking Code: 12*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8
V
|Id|ⓘ - Maximum Drain Current: 3.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.2
nC
trⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052
Ohm
Package:
SOT-323
GSM7412
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM7412
Datasheet (PDF)
..1. Size:862K globaltech semi
gsm7412.pdf
GSM7412 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7412, N-Channel enhancement mode 20V/3.8A , RDS(ON)= 52m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 56m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 68m@VGS=1.8V Super high density cell design for extremely These devices a
9.1. Size:885K globaltech semi
gsm7472s.pdf
GSM7472S GSM7472S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=14m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited
9.2. Size:755K globaltech semi
gsm7424s.pdf
GSM7424S GSM7424S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited for
9.3. Size:923K globaltech semi
gsm7402.pdf
GSM7402 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7402, N-Channel enhancement mode 20V/3.6A , RDS(ON)= 60m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 70m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 90m@VGS=1.8V Super high density cell design for extremely These devices a
9.4. Size:870K globaltech semi
gsm7420.pdf
GSM7420 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7420, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.6A , RDS(ON)= 70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l
9.5. Size:873K globaltech semi
gsm7400.pdf
GSM7400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7400, N-Channel enhancement mode 30V/3.6A , RDS(ON)= 82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A , RDS(ON)= 90m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A , RDS(ON)= 102m@VGS=2.5V Super high density cell design for extremely These devices a
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