GSM7472S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: GSM7472S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm

Encapsulados: DFN33X33-8L

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GSM7472S datasheet

 ..1. Size:885K  globaltech semi
 gsm7472s.pdf pdf_icon

GSM7472S

GSM7472S GSM7472S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7472S, N-Channel enhancement mode 30V/15A,RDS(ON)=8.6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/13A,RDS(ON)=14m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.1. Size:862K  globaltech semi
 gsm7412.pdf pdf_icon

GSM7472S

GSM7412 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7412, N-Channel enhancement mode 20V/3.8A , RDS(ON)= 52m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 56m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 68m @VGS=1.8V Super high density cell design for extremely These devices a

 9.2. Size:755K  globaltech semi
 gsm7424s.pdf pdf_icon

GSM7472S

GSM7424S GSM7424S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.3. Size:923K  globaltech semi
 gsm7402.pdf pdf_icon

GSM7472S

GSM7402 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM7402, N-Channel enhancement mode 20V/3.6A , RDS(ON)= 60m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A , RDS(ON)= 70m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A , RDS(ON)= 90m @VGS=1.8V Super high density cell design for extremely These devices a

MOSTRAR MÁS

Otros transistores... GSM7002T, GSM7002W, GSM7106S, GSM7400, GSM7402, GSM7412, GSM7420, GSM7424S, AO3400, GSM7617WS, GSM7619WS, GSM7923WS, GSM8205, GSM8206, GSM8411, GSM8412, GSM8439