GSM8904 Datasheet. Equivalente

 ..1. Size:848K  globaltech semi
 gsm8904.pdf

GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 9.1. Size:887K  globaltech semi
 gsm8988.pdf

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 9.2. Size:830K  globaltech semi
 gsm8936.pdf

GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m @ VGS=3.3V Super high density cell design for extremely low These devices are p

 9.3. Size:777K  globaltech semi
 gsm8987w.pdf

 9.4. Size:872K  globaltech semi
 gsm8918.pdf

GSM8918 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 9.5. Size:449K  globaltech semi
 gsm8987.pdf

 9.6. Size:849K  globaltech semi
 gsm8968.pdf

GSM8968 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8968, N-Channel enhancement mode 100V/3.0A,RDS(ON)=300m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.0A,RDS(ON)=310m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 9.7. Size:717K  globaltech semi
 gsm8931.pdf

GSM8931 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=36m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=46m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for l

 9.8. Size:1190K  globaltech semi
 gsm8943.pdf

GSM8943 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)=43m @VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)=58m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for l

 9.9. Size:886K  globaltech semi
 gsm8988w.pdf

GSM8988W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for

 9.10. Size:917K  globaltech semi
 gsm8995.pdf

GSM8995 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=125m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=165m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for

 9.11. Size:813K  globaltech semi
 gsm8989.pdf

GSM8989 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=115m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=125m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for