GSM8904 Todos los transistores

 

GSM8904 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM8904
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: SOT-89
 

 Búsqueda de reemplazo de GSM8904 MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM8904 Datasheet (PDF)

 ..1. Size:848K  globaltech semi
 gsm8904.pdf pdf_icon

GSM8904

GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 9.1. Size:887K  globaltech semi
 gsm8988.pdf pdf_icon

GSM8904

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 9.2. Size:830K  globaltech semi
 gsm8936.pdf pdf_icon

GSM8904

GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m@ VGS=3.3V Super high density cell design for extremely low These devices are p

 9.3. Size:777K  globaltech semi
 gsm8987w.pdf pdf_icon

GSM8904

GSM8987W 80V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

MOSTRAR MÁS

Otros transistores... GSM8471 , GSM8473 , GSM8483 , GSM8803 , GSM8816 , GSM8822 , GSM8822S , GSM8823 , AO3401 , GSM8918 , GSM8931 , GSM8936 , GSM8943 , GSM8968 , GSM8987 , GSM8987W , GSM8988 .

History: KIA2808A-3P | SSU70R750S | GSM8936 | CS75N75 | IPI120N04S4-01 | KIA5610A | SM8A04NSU

 

 
Back to Top

 


 
.