All MOSFET. GSM8904 Datasheet

 

GSM8904 Datasheet and Replacement


   Type Designator: GSM8904
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SOT-89
 

 GSM8904 substitution

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GSM8904 Datasheet (PDF)

 ..1. Size:848K  globaltech semi
 gsm8904.pdf pdf_icon

GSM8904

GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 9.1. Size:887K  globaltech semi
 gsm8988.pdf pdf_icon

GSM8904

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 9.2. Size:830K  globaltech semi
 gsm8936.pdf pdf_icon

GSM8904

GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m@ VGS=3.3V Super high density cell design for extremely low These devices are p

 9.3. Size:777K  globaltech semi
 gsm8987w.pdf pdf_icon

GSM8904

GSM8987W 80V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

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Datasheet: GSM8471 , GSM8473 , GSM8483 , GSM8803 , GSM8816 , GSM8822 , GSM8822S , GSM8823 , AO3401 , GSM8918 , GSM8931 , GSM8936 , GSM8943 , GSM8968 , GSM8987 , GSM8987W , GSM8988 .

History: SM2A06NSU | TK40P03M1 | KIA730H-220F | SWP066R68E7T | TK40J60U | IPW50R350CP | IPW50R399CP

Keywords - GSM8904 MOSFET datasheet

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