GSM8904 Datasheet. Specs and Replacement
Type Designator: GSM8904
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ -
Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
Package: SOT-89
- MOSFET ⓘ Cross-Reference Search
GSM8904 datasheet
..1. Size:848K globaltech semi
gsm8904.pdf 
GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low ... See More ⇒
9.1. Size:887K globaltech semi
gsm8988.pdf
GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo... See More ⇒
9.2. Size:830K globaltech semi
gsm8936.pdf
GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m @ VGS=3.3V Super high density cell design for extremely low These devices are p... See More ⇒
9.4. Size:872K globaltech semi
gsm8918.pdf
GSM8918 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low ... See More ⇒
9.6. Size:849K globaltech semi
gsm8968.pdf
GSM8968 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8968, N-Channel enhancement mode 100V/3.0A,RDS(ON)=300m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.0A,RDS(ON)=310m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo... See More ⇒
9.7. Size:717K globaltech semi
gsm8931.pdf
GSM8931 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=36m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=46m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for l... See More ⇒
9.8. Size:1190K globaltech semi
gsm8943.pdf
GSM8943 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)=43m @VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)=58m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for l... See More ⇒
9.9. Size:886K globaltech semi
gsm8988w.pdf
GSM8988W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for ... See More ⇒
9.10. Size:917K globaltech semi
gsm8995.pdf
GSM8995 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=125m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=165m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for... See More ⇒
9.11. Size:813K globaltech semi
gsm8989.pdf
GSM8989 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=115m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=125m @ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for... See More ⇒
Detailed specifications: GSM8471, GSM8473, GSM8483, GSM8803, GSM8816, GSM8822, GSM8822S, GSM8823, AO3401, GSM8918, GSM8931, GSM8936, GSM8943, GSM8968, GSM8987, GSM8987W, GSM8988
Keywords - GSM8904 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
