GSM8918
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM8918
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.45
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 4.6
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10
nS
Cossⓘ - Capacitancia
de salida: 110
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03
Ohm
Paquete / Cubierta:
SOT-89
- Selección de transistores por parámetros
GSM8918
Datasheet (PDF)
..1. Size:872K globaltech semi
gsm8918.pdf 
GSM8918 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low
9.1. Size:887K globaltech semi
gsm8988.pdf
GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo
9.2. Size:848K globaltech semi
gsm8904.pdf
GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low
9.3. Size:830K globaltech semi
gsm8936.pdf
GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m@ VGS=3.3V Super high density cell design for extremely low These devices are p
9.4. Size:777K globaltech semi
gsm8987w.pdf
GSM8987W 80V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low
9.5. Size:449K globaltech semi
gsm8987.pdf
GSM8987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low
9.6. Size:849K globaltech semi
gsm8968.pdf
GSM8968 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8968, N-Channel enhancement mode 100V/3.0A,RDS(ON)=300m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/2.0A,RDS(ON)=310m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo
9.7. Size:717K globaltech semi
gsm8931.pdf
GSM8931 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8931, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=36m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=46m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for l
9.8. Size:1190K globaltech semi
gsm8943.pdf
GSM8943 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM8943, P-Channel enhancement mode -40V/-4.6A,RDS(ON)=43m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-3.6A,RDS(ON)=58m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for l
9.9. Size:886K globaltech semi
gsm8988w.pdf
GSM8988W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988W, N-Channel enhancement mode 100V/4.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=138m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for
9.10. Size:917K globaltech semi
gsm8995.pdf
GSM8995 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM8995, P-Channel enhancement mode -30V/-4.6A,RDS(ON)=125m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.6A,RDS(ON)=165m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for
9.11. Size:813K globaltech semi
gsm8989.pdf
GSM8989 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=115m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=125m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for
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History: IXTP50N28T
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