GSM8918 Datasheet. Specs and Replacement
Type Designator: GSM8918
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT-89
GSM8918 substitution
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GSM8918 datasheet
gsm8918.pdf
GSM8918 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM8918, N-Channel enhancement mode 40V/4.6A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/3.6A,RDS(ON)=54m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low ... See More ⇒
gsm8988.pdf
GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo... See More ⇒
gsm8904.pdf
GSM8904 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM8904, N-Channel enhancement mode 30V/5.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/3.6A,RDS(ON)=95m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low ... See More ⇒
gsm8936.pdf
GSM8936 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8936, N-Channel enhancement mode 60V/4.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/3.6A,RDS(ON)=54m @ VGS=4.5V to provide excellent RDS(ON), low gate charge. 60V/2.0A,RDS(ON)=95m @ VGS=3.3V Super high density cell design for extremely low These devices are p... See More ⇒
Detailed specifications: GSM8473, GSM8483, GSM8803, GSM8816, GSM8822, GSM8822S, GSM8823, GSM8904, K3569, GSM8931, GSM8936, GSM8943, GSM8968, GSM8987, GSM8987W, GSM8988, GSM8988W
Keywords - GSM8918 MOSFET specs
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