GSM9565S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSM9565S
Código: 9565S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 17 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 100 nS
Conductancia de drenaje-sustrato (Cd): 100 pF
Resistencia entre drenaje y fuente RDS(on): 0.058 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET GSM9565S
GSM9565S Datasheet (PDF)
gsm9565s.pdf
GSM9565S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9565S, P-Channel enhancement mode -40V/-8.6A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-6.2A,RDS(ON)=86m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm9566w.pdf
GSM9566W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)=80m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.5A,RDS(ON)=105m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo
gsm9510s.pdf
GSM9510S 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM9510S, P-Channel enhancement mode -100V/-8.0A,RDS(ON)=200m@VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-7.0A,RDS(ON)=220m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite
gsm9575s.pdf
GSM9575S 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)=68m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-12A,RDS(ON)=78m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l
gsm9576.pdf
GSM9576 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9576, P-Channel enhancement mode -60V/-14A,RDS(ON)=115m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-10A,RDS(ON)=125m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .