GSM9576 Todos los transistores

 

GSM9576 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GSM9576
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de GSM9576 MOSFET

   - Selección ⓘ de transistores por parámetros

 

GSM9576 Datasheet (PDF)

 ..1. Size:891K  globaltech semi
 gsm9576.pdf pdf_icon

GSM9576

GSM9576 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9576, P-Channel enhancement mode -60V/-14A,RDS(ON)=115m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-10A,RDS(ON)=125m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

 8.1. Size:998K  globaltech semi
 gsm9575s.pdf pdf_icon

GSM9576

GSM9575S 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM9575S, P-Channel enhancement mode -60V/-18A,RDS(ON)=68m@VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-12A,RDS(ON)=78m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

 9.1. Size:985K  globaltech semi
 gsm9510s.pdf pdf_icon

GSM9576

GSM9510S 100V P-Channel Enhancement Mode MOSFET Product Description Features GSM9510S, P-Channel enhancement mode -100V/-8.0A,RDS(ON)=200m@VGS=-10V MOSFET, uses Advanced Trench Technology to -100V/-7.0A,RDS(ON)=220m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

 9.2. Size:1264K  globaltech semi
 gsm9566w.pdf pdf_icon

GSM9576

GSM9566W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM9566W, P-Channel enhancement mode -40V/-5.0A,RDS(ON)=80m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.5A,RDS(ON)=105m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

MOSTRAR MÁS

Otros transistores... GSM9434WS , GSM9435S , GSM9435WS , GSM9498 , GSM9510S , GSM9565S , GSM9566W , GSM9575S , IRFP450 , GSM9910 , GSM9971 , GSM9971B , GSM9972S , GSM9977 , GSM9987 , GSM9990S , GSM9995S .

History: NCEP039N10MD | FDD9407-F085 | NCEP028N85 | AUIRL3705N | FDD9509L-F085 | IPD70R1K4P7S

 

 
Back to Top

 


 
.