GSM9995S Datasheet. Equivalente

 ..1. Size:891K  globaltech semi
 gsm9995s.pdf

GSM9995S 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9995S, N-Channel enhancement mode 100V/20A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:989K  globaltech semi
 gsm9990s.pdf

GSM9990S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9990S, N-Channel enhancement mode 60V/40A,RDS(ON)=7.8m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=9.8m @VGS=6V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-252-2L

 8.2. Size:963K  globaltech semi
 gsm9997.pdf

 9.1. Size:931K  globaltech semi
 gsm9972s.pdf

GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.2. Size:922K  globaltech semi
 gsm9971b.pdf

GSM9971B 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971B, N-Channel enhancement mode 60V/18A,RDS(ON)=56m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=62m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.3. Size:673K  globaltech semi
 gsm9987.pdf

GSM9987 GSM9987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m @VGS=10V MOSFET, uses Advanced Trench 90V/12A,RDS(ON)= 85m @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. These devices are particularly low RDS (ON) suit

 9.4. Size:803K  globaltech semi
 gsm9977.pdf

GSM9977 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9977, N-Channel enhancement mode 60V/8A,RDS(ON)=118m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low T

 9.5. Size:433K  globaltech semi
 gsm9971.pdf

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/12A,RDS(ON)= 50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.6. Size:1005K  globaltech semi
 gsm9910.pdf