GSM9995S Datasheet. Specs and Replacement

Type Designator: GSM9995S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: TO-252

GSM9995S substitution

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GSM9995S datasheet

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GSM9995S

GSM9995S 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9995S, N-Channel enhancement mode 100V/20A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

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GSM9995S

GSM9990S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9990S, N-Channel enhancement mode 60V/40A,RDS(ON)=7.8m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=9.8m @VGS=6V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-252-2L... See More ⇒

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GSM9995S

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GSM9995S

GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒

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Detailed specifications: GSM9576, GSM9910, GSM9971, GSM9971B, GSM9972S, GSM9977, GSM9987, GSM9990S, RFP50N06, GSM9997, GSMBSS123, GSMBSS138, GSMBSS84, H5N2001LM, H5N2512FL-M0, H5N2522FP-E0, H5N2901FL-M0

Keywords - GSM9995S MOSFET specs

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