GSM9997 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSM9997
   Código: 9997
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 40 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 10 nC
   Tiempo de subida (tr): 8 nS
   Conductancia de drenaje-sustrato (Cd): 50 pF
   Resistencia entre drenaje y fuente RDS(on): 0.12 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET GSM9997

GSM9997 Datasheet (PDF)

..1. Size:963K globaltech semi
gsm9997.pdf

GSM9997 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9997, N-Channel enhancement mode 100V/8A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

8.1. Size:989K globaltech semi
gsm9990s.pdf

GSM9990S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9990S, N-Channel enhancement mode 60V/40A,RDS(ON)=7.8m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=9.8m@VGS=6V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-252-2L

8.2. Size:891K globaltech semi
gsm9995s.pdf

GSM9995S 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9995S, N-Channel enhancement mode 100V/20A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.1. Size:931K globaltech semi
gsm9972s.pdf

GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.2. Size:922K globaltech semi
gsm9971b.pdf

GSM9971B 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971B, N-Channel enhancement mode 60V/18A,RDS(ON)=56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.3. Size:673K globaltech semi
gsm9987.pdf

GSM9987 GSM9987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m@VGS=10V MOSFET, uses Advanced Trench 90V/12A,RDS(ON)= 85m@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. These devices are particularly low RDS (ON) suit

9.4. Size:803K globaltech semi
gsm9977.pdf

GSM9977 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9977, N-Channel enhancement mode 60V/8A,RDS(ON)=118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low T

9.5. Size:433K globaltech semi
gsm9971.pdf

60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/12A,RDS(ON)= 50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

9.6. Size:1005K globaltech semi
gsm9910.pdf

GSM9910 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9910, N-Channel enhancement mode 100V/4A,RDS(ON)=320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4A,RDS(ON)=340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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