GSM9997 Datasheet. Specs and Replacement
Type Designator: GSM9997
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-252
GSM9997 substitution
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GSM9997 datasheet
gsm9990s.pdf
GSM9990S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9990S, N-Channel enhancement mode 60V/40A,RDS(ON)=7.8m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=9.8m @VGS=6V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-252-2L... See More ⇒
gsm9995s.pdf
GSM9995S 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9995S, N-Channel enhancement mode 100V/20A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒
gsm9972s.pdf
GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low ... See More ⇒
Detailed specifications: GSM9910, GSM9971, GSM9971B, GSM9972S, GSM9977, GSM9987, GSM9990S, GSM9995S, SI2302, GSMBSS123, GSMBSS138, GSMBSS84, H5N2001LM, H5N2512FL-M0, H5N2522FP-E0, H5N2901FL-M0, H5N3005LM
Keywords - GSM9997 MOSFET specs
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