GSMBSS123 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: GSMBSS123
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: SOT-23

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GSMBSS123 Datasheet (PDF)

..1. Size:233K globaltech semi
gsmbss123.pdf

GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS123 is the N-Channel enhancement 100V/0.1A , RDS(ON)=6.0@VGS=10V mode field effect transistors are produced using SOT-23 package design high cell density DMOS technology. Lead(Pb)-FreeThese products have been designed to minimize on-state resistance while provide rugged, reliable, and

7.1. Size:432K globaltech semi
gsmbss138.pdf

GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement 50V/0.2A , RDS(ON)=3.5@VGS=5V mode field effect transistors are produced using 50V/0.2A , RDS(ON)=10@VGS=2.75V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to min

8.1. Size:375K globaltech semi
gsmbss84.pdf

GSMBSS84 GSMBSS84 50V P-Channel Enhancement Mode MOSFET Product Description Features -50V/-0.1A,RDS(ON)=10@VGS=-5V GSMBSS84, P-Channel enhancement mode Super high density cell design for extremely MOSFET, uses Advanced Trench Technology to low RDS (ON) provide excellent RDS(ON), low gate charge. Exceptional on-resistance and maximum DCcurrent capability The

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