GSMBSS123 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GSMBSS123 Datasheet (PDF)

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GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS123 is the N-Channel enhancement 100V/0.1A , RDS(ON)=6.0@VGS=10V mode field effect transistors are produced using SOT-23 package design high cell density DMOS technology. Lead(Pb)-FreeThese products have been designed to minimize on-state resistance while provide rugged, reliable, and

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GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement 50V/0.2A , RDS(ON)=3.5@VGS=5V mode field effect transistors are produced using 50V/0.2A , RDS(ON)=10@VGS=2.75V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to min

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GSMBSS84 GSMBSS84 50V P-Channel Enhancement Mode MOSFET Product Description Features -50V/-0.1A,RDS(ON)=10@VGS=-5V GSMBSS84, P-Channel enhancement mode Super high density cell design for extremely MOSFET, uses Advanced Trench Technology to low RDS (ON) provide excellent RDS(ON), low gate charge. Exceptional on-resistance and maximum DCcurrent capability The

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