GSMBSS123
MOSFET. Datasheet pdf. Equivalent
Type Designator: GSMBSS123
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.225
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8
V
|Id|ⓘ - Maximum Drain Current: 0.17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 9
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6
Ohm
Package:
SOT-23
GSMBSS123
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSMBSS123
Datasheet (PDF)
..1. Size:233K globaltech semi
gsmbss123.pdf 
GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS123 is the N-Channel enhancement 100V/0.1A , RDS(ON)=6.0@VGS=10V mode field effect transistors are produced using SOT-23 package design high cell density DMOS technology. Lead(Pb)-FreeThese products have been designed to minimize on-state resistance while provide rugged, reliable, and
7.1. Size:432K globaltech semi
gsmbss138.pdf
GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement 50V/0.2A , RDS(ON)=3.5@VGS=5V mode field effect transistors are produced using 50V/0.2A , RDS(ON)=10@VGS=2.75V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to min
8.1. Size:375K globaltech semi
gsmbss84.pdf
GSMBSS84 GSMBSS84 50V P-Channel Enhancement Mode MOSFET Product Description Features -50V/-0.1A,RDS(ON)=10@VGS=-5V GSMBSS84, P-Channel enhancement mode Super high density cell design for extremely MOSFET, uses Advanced Trench Technology to low RDS (ON) provide excellent RDS(ON), low gate charge. Exceptional on-resistance and maximum DCcurrent capability The
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