H5N5005PL-E0-E Todos los transistores

 

H5N5005PL-E0-E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: H5N5005PL-E0-E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 270 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 3 V
   Corriente continua de drenaje |Id|: 60 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 2 V
   Carga de la puerta (Qg): 300 nC
   Tiempo de subida (tr): 380 nS
   Conductancia de drenaje-sustrato (Cd): 1060 pF
   Resistencia entre drenaje y fuente RDS(on): 0.085 Ohm
   Paquete / Cubierta: TO-264

 Búsqueda de reemplazo de MOSFET H5N5005PL-E0-E

 

H5N5005PL-E0-E Datasheet (PDF)

 ..1. Size:191K  renesas
h5n5005pl-e0-e.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

Preliminary Datasheet H5N5005PL-E0-E R07DS1199EJ0300500V - 60A - MOS FET Rev.3.00High Speed Power Switching Mar 25, 2014Features Low on-resistance RDS(on) = 0.070 typ. (at ID = 30 A, VGS= 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode Outline RENESAS Package cod

 5.1. Size:154K  renesas
rej03g0419 h5n5005plds.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:109K  renesas
h5n5006ld h5n5006lm.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:111K  renesas
rej03g1115 h5n5006ldlslmds.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:99K  renesas
rej03g1116 h5n5007pds.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:107K  renesas
rej03g0397 h5n5006dlds.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:169K  renesas
h5n5004pl-e0-e.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

Preliminary Datasheet H5N5004PL-E0-E R07DS1198EJ0100500V - 50A - MOS FET Rev.1.00High Speed Power Switching Mar 26, 2014Features Low on-resistance R DS (on) = 0.09 typ. (at ID = 25 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ Outline

 8.6. Size:206K  renesas
rej03g1112 h5n5001fmds.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:100K  renesas
rej03g1114 h5n5006fmds.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:121K  renesas
rej03g1113 h5n5004plds.pdf

H5N5005PL-E0-E
H5N5005PL-E0-E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


H5N5005PL-E0-E
  H5N5005PL-E0-E
  H5N5005PL-E0-E
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top