H5N5005PL-E0-E datasheet, аналоги, основные параметры
Наименование производителя: H5N5005PL-E0-E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 270 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 3 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 380 ns
Cossⓘ - Выходная емкость: 1060 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm
Тип корпуса: TO-264
Аналог (замена) для H5N5005PL-E0-E
- подборⓘ MOSFET транзистора по параметрам
H5N5005PL-E0-E даташит
h5n5005pl-e0-e.pdf
Preliminary Datasheet H5N5005PL-E0-E R07DS1199EJ0300 500V - 60A - MOS FET Rev.3.00 High Speed Power Switching Mar 25, 2014 Features Low on-resistance RDS(on) = 0.070 typ. (at ID = 30 A, VGS= 10 V, Ta = 25 C) Low leakage current High speed switching Low gate charge Avalanche ratings Built-in fast recovery diode Outline RENESAS Package cod
rej03g0419 h5n5005plds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
h5n5006ld h5n5006lm.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1115 h5n5006ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие IGBT... GSMBSS84, H5N2001LM, H5N2512FL-M0, H5N2522FP-E0, H5N2901FL-M0, H5N3005LM, H5N3007FL-M0, H5N5004PL-E0-E, 75N75, H5N5006LD, H5N5006LM, H5N5016PL-E0-E, H7N0405LD, H7N0405LM, H7N0607DL, H7N1002LM, INJ0001AC1
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
a1941 datasheet | hrf3205 | c2837 datasheet | 2n414 | c3998 | c4468 datasheet | 2sc2603 | jcs50n20wt










