INJ0212AP1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: INJ0212AP1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.75 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
Encapsulados: SC-62
Búsqueda de reemplazo de INJ0212AP1 MOSFET
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INJ0212AP1 datasheet
inj0212ap1.pdf
INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT mm INJ0210AP1 is a Silicon P-channel MOSFET. 4.4 1.5 This product is most suitable for use such as portable 1.6 machinery, because of low voltage drive and low on resistance. MARKING S D G FEATURE Input impedance is high, and not necessary to 0.5 0.4 0.4 consider a drive ele
inj0203bc1.pdf
INJ0203BC1 Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit INJ0203BC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8 machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -2.5
inj0203ac1.pdf
INJ0203AC1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit INJ0203AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8 machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65 FEATURE Input impedance is high, and not necessary to consider a drive electric current.
Otros transistores... INJ0003AC1, INJ0003AM1, INJ0003AU1, INJ0011AC1, INJ0011AM1, INJ0011AU1, INJ0203AC1, INJ0203BC1, IRF730, INJ0303AC1, INJ0312AC1, INJ0312AP1, INK0001AC1, INK0001AM1, INK0001AU1, INK0001BC1, INK0001BM1
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