INJ0212AP1 Datasheet and Replacement
Type Designator: INJ0212AP1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: SC-62
INJ0212AP1 substitution
INJ0212AP1 Datasheet (PDF)
inj0212ap1.pdf

INJ0212AP1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING UNITmmINJ0210AP1 is a Silicon P-channel MOSFET. 4.4 1.5 This product is most suitable for use such as portable 1.6machinery, because of low voltage drive and low on resistance. MARKINGS D G FEATURE Input impedance is high, and not necessary to 0.5 0.4 0.4 consider a drive ele
inj0203bc1.pdf

INJ0203BC1 Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING Unit INJ0203BC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current. Drive voltage -2.5
inj0203ac1.pdf

INJ0203AC1 High Speed Switching Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING Unit INJ0203AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current.
Datasheet: INJ0003AC1 , INJ0003AM1 , INJ0003AU1 , INJ0011AC1 , INJ0011AM1 , INJ0011AU1 , INJ0203AC1 , INJ0203BC1 , BS170 , INJ0303AC1 , INJ0312AC1 , INJ0312AP1 , INK0001AC1 , INK0001AM1 , INK0001AU1 , INK0001BC1 , INK0001BM1 .
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