INK021AAP1 Todos los transistores

 

INK021AAP1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: INK021AAP1

Código: KD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.5 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Conductancia de drenaje-sustrato (Cd): 65 pF

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: SC-62

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INK021AAP1 Datasheet (PDF)

1.1. ink021aap1.pdf Size:121K _update-mosfet

INK021AAP1
INK021AAP1



1.2. ink021aap1.pdf Size:121K _isahaya

INK021AAP1
INK021AAP1



 4.1. ink0210ap1.pdf Size:136K _update-mosfet

INK021AAP1
INK021AAP1

 INK0210AP1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT:mm INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4 machinery, because of low voltage drive and low on resistance. 1.5 1.6 FEATURE ・Input impedance is high, and not necessary to MARKING consider a drive electric current.

4.2. ink0210ac1.pdf Size:133K _update-mosfet

INK021AAP1
INK021AAP1

 INK0210AC1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT:mm INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. ① FEATURE ・Input impedance is high, and not necessary to ② ③ consider a drive elect

 4.3. ink0210ap1.pdf Size:136K _isahaya

INK021AAP1
INK021AAP1

 INK0210AP1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT:mm INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4 machinery, because of low voltage drive and low on resistance. 1.5 1.6 FEATURE ・Input impedance is high, and not necessary to MARKING consider a drive electric current.

4.4. ink0210ac1.pdf Size:133K _isahaya

INK021AAP1
INK021AAP1

 INK0210AC1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT:mm INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. ① FEATURE ・Input impedance is high, and not necessary to ② ③ consider a drive elect

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