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INK021AAP1 Spec and Replacement


   Type Designator: INK021AAP1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SC-62

 INK021AAP1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

INK021AAP1 Specs

 ..1. Size:121K  isahaya
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INK021AAP1

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 8.1. Size:133K  isahaya
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INK021AAP1

INK0210AC1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. FEATURE Input impedance is high, and not necessary to consider a drive elect... See More ⇒

 8.2. Size:136K  isahaya
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INK021AAP1

INK0210AP1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4 machinery, because of low voltage drive and low on resistance. 1.5 1.6 FEATURE Input impedance is high, and not necessary to MARKING consider a drive electric current. ... See More ⇒

 9.1. Size:115K  isahaya
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INK021AAP1

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Detailed specifications: INK0103AU1 , INK0112AC1 , INK0112AM1 , INK0112AU1 , INK011BAP1 , INK0200AC1 , INK0210AC1 , INK0210AP1 , IRF4905 , INK0302AC1 , INK0310AP1 , IVN5001ANE , IRC530PBF , IRC540PBF , IRC630PBF , IRC634PBF , IRC640PBF .

History: SK07N65B-TF | STP4NA60

Keywords - INK021AAP1 MOSFET specs

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