INK021AAP1 Datasheet. Specs and Replacement

Type Designator: INK021AAP1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SC-62

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INK021AAP1 datasheet

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INK021AAP1

INK0210AC1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. FEATURE Input impedance is high, and not necessary to consider a drive elect... See More ⇒

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INK021AAP1

INK0210AP1 High Speed Switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4 machinery, because of low voltage drive and low on resistance. 1.5 1.6 FEATURE Input impedance is high, and not necessary to MARKING consider a drive electric current. ... See More ⇒

 9.1. Size:115K  isahaya
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INK021AAP1

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Detailed specifications: INK0103AU1, INK0112AC1, INK0112AM1, INK0112AU1, INK011BAP1, INK0200AC1, INK0210AC1, INK0210AP1, IRFP064N, INK0302AC1, INK0310AP1, IVN5001ANE, IRC530PBF, IRC540PBF, IRC630PBF, IRC634PBF, IRC640PBF

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