INK021AAP1 MOSFET. Datasheet pdf. Equivalent
Type Designator: INK021AAP1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SC-62
INK021AAP1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
INK021AAP1 Datasheet (PDF)
ink0210ac1.pdf
INK0210AC1 High Speed Switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INK0210AC1 is a Silicon N-channel MOSFET. 2.8 This product is most suitable for use such as portable 0.65 1.5 0.65 machinery, because of low voltage drive and low on resistance. FEATURE Input impedance is high, and not necessary to consider a drive elect
ink0210ap1.pdf
INK0210AP1 High Speed Switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable 4.4machinery, because of low voltage drive and low on resistance. 1.51.6FEATURE Input impedance is high, and not necessary to MARKINGconsider a drive electric current.
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