SML5025HN Todos los transistores

 

SML5025HN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SML5025HN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 2950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: TO258
     - Selección de transistores por parámetros

 

SML5025HN Datasheet (PDF)

 8.1. Size:30K  semelab
sml5020bn.pdf pdf_icon

SML5025HN

SML5020BNSEMELAB4TH GENERATION MOSFETTO247AD Package Outline.Dimensions in mm (inches)NCHANNEL4.69 (0.185) 15.49 (0.610)5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3VDSS 500V1.65 (0.065)2.13 (0.084)0.40 (0.016)0.79 (0.031) 2.87 (0.113)3.12 (0.123)ID(cont) 28.0A1.01 (0

 9.1. Size:20K  semelab
sml50a19.pdf pdf_icon

SML5025HN

SML50A19TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 500V1 2ID(cont) 18.5A3(case)RDS(on) 0.2403.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1

 9.2. Size:21K  semelab
sml50b26.pdf pdf_icon

SML5025HN

SML50B26TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 500V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 26A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.2002.21

 9.3. Size:601K  semelab
sml50hb06.pdf pdf_icon

SML5025HN

SML50HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 VVce DC Collector Current Tc=80C Ic, nom 50 A Tc=25C Ic 75 Repetitive peak Collector Cur- tp=1msec,Tc=80C Icrm 100 Arent Total PowerDissipation Tc=25C Ptot 280 WGate-emitte

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: P06P03LDG | NCE65TF099F | HUFA76423S3ST

 

 
Back to Top

 


 
.