IPI70R950CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPI70R950CE, IPD70R950CE, IPS70R950CEMOSFETIPAK DPAK IPAK SL700V CoolMOS CE Power Transistortabtab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplicati

isc N-Channel MOSFET Transistor IPI70R950CEFEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RAT

IPB70N12S3-11IPI70N12S3-11, IPP70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperatur

IPB70N04S4-06IPI70N04S4-06, IPP70N04S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P

IPI70N10SL-16IPP70N10SL-16, IPB70N10SL-16SIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 16 m Enhancement modeID 70 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated32 Green Package 1(lead free)P-TO220-3-1Type Package Ordering Code MarkingIPP7

IPB70N10S3-12IPI70N10S3-12, IPP70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 11.3mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanc

IPB70N04S3-07IPI70N04S3-07, IPP70N04S3-07OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t

IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mWDS(on),maxI 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche

IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalan