IPI70R950CE Datasheet and Replacement
Type Designator: IPI70R950CE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-262
IPI70R950CE substitution
IPI70R950CE Datasheet (PDF)
ipi70r950ce ipd70r950ce ips70r950ce.pdf

IPI70R950CE, IPD70R950CE, IPS70R950CEMOSFETIPAK DPAK IPAK SL700V CoolMOS CE Power Transistortabtab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplicati
ipi70r950ce.pdf

isc N-Channel MOSFET Transistor IPI70R950CEFEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RAT
ipb70n12s3-11 ipi70n12s3-11 ipp70n12s3-11.pdf

IPB70N12S3-11IPI70N12S3-11, IPP70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperatur
ipb70n04s4-06 ipi70n04s4-06 ipp70n04s4-06.pdf

IPB70N04S4-06IPI70N04S4-06, IPP70N04S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P
Datasheet: IVN5000ANE , IVN5000ANF , IVN5000ANH , IVN5001AND , IVN5001ANF , IVN5001ANH , IXCP01N90E , IXCY01N90E , 5N65 , IPI05CN10N , SCT3060AR , 2SK2071-01S , FIR4N65AFG , MTM45N05E , MTP45N05E , SSS45N20B , RFP4N35 .
History: WMO175N10LG4 | VP2206N3
Keywords - IPI70R950CE MOSFET datasheet
IPI70R950CE cross reference
IPI70R950CE equivalent finder
IPI70R950CE lookup
IPI70R950CE substitution
IPI70R950CE replacement
History: WMO175N10LG4 | VP2206N3



LIST
Last Update
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
2sd551 | ac128 datasheet | 2n5496 | 2sb600 | 2sa1209 | 2sc1364 replacement | 2sd665 | 7506 mosfet datasheet