IPI70R950CE Specs and Replacement
Type Designator: IPI70R950CE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 23 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO-262
IPI70R950CE substitution
- MOSFET ⓘ Cross-Reference Search
IPI70R950CE datasheet
ipi70r950ce ipd70r950ce ips70r950ce.pdf
IPI70R950CE, IPD70R950CE, IPS70R950CE MOSFET I PAK DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applicati... See More ⇒
ipi70r950ce.pdf
isc N-Channel MOSFET Transistor IPI70R950CE FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RAT... See More ⇒
ipb70n12s3-11 ipi70n12s3-11 ipp70n12s3-11.pdf
IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperatur... See More ⇒
ipb70n04s4-06 ipi70n04s4-06 ipp70n04s4-06.pdf
IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 6.2 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P... See More ⇒
Detailed specifications: IVN5000ANE, IVN5000ANF, IVN5000ANH, IVN5001AND, IVN5001ANF, IVN5001ANH, IXCP01N90E, IXCY01N90E, 2SK3568, IPI05CN10N, SCT3060AR, 2SK2071-01S, FIR4N65AFG, MTM45N05E, MTP45N05E, SSS45N20B, RFP4N35
Keywords - IPI70R950CE MOSFET specs
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