SCT3060AR MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SCT3060AR datasheet

..1. Size:1202K rohm
sct3060ar.pdf pdf_icon

SCT3060AR N-channel SiC power MOSFET Datasheet lOutline TO-247-4L VDSS 650V RDS(on) (Typ.) 60m 39A ID*1 PD 165W (1) (2)(3)(4) lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Please note Driver Source and Power Source are 5) Simple to drive not exchangeable. Their exchange might lead to malfunction. 6) P

6.1. Size:1018K rohm
sct3060al.pdf pdf_icon

SCT3060AL N-channel SiC power MOSFET Data Sheet lOutline TO-247N VDSS 650V RDS(on) (Typ.) 60mW ID 39A (3) PD 165W (2) (1) lInner circuit lFeatures (1) Gate (2) Drain 1) Low on-resistance (3) Source 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating

7.1. Size:242K inchange semiconductor
sct3060.pdf pdf_icon

isc N-Channel SiC SMOSFET Transistor SCT3060 FEATURES Static drain-source on-resistance RDS(on) 78m Fast switching speed Fast reverse recovery 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC/DC converters Switch mode power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

9.1. Size:903K rohm
sct3080kl.pdf pdf_icon

SCT3080KL N-channel SiC power MOSFET Datasheet Outline TO-247N VDSS 1200V RDS(on) (Typ.) 80m ID 31A (3) PD 165W (2) (1) Inner circuit (2) Features (1) Gate (2) Drain 1) Low on-resistance (3) Source *1 (1) 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery (3) 4) Easy to parallel Packaging specifications 5) Simple to drive Packing Tube