RFP4N35 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RFP4N35 datasheet

..1. Size:42K harris semi
rfm4n35 rfm4n40 rfp4n35 rfp4n40.pdf pdf_icon

RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Features Power MOSFETs 4A, 350V and 400V [ /Title [ /Title These are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000 (RFM4N () power field effect transistors designed for applications such 35, Related Literature /Sub- as switchi

9.1. Size:93K fairchild semi
rfp4n100 rf1s4n100sm.pdf pdf_icon

RFP4N100, RF1S4N100SM Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, High Voltage, Features N-Channel Power MOSFETs 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500 enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse) transistors. They are designed for use in applications such as switching regulators, switching conver

9.2. Size:255K njs
rfl2n05l rfl2n06l rfp4n05l rfp4n06l.pdf pdf_icon

9.3. Size:40K intersil
rfp4n05l rfp4n06l.pdf pdf_icon

RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, Features N-Channel Power MOSFETs 4A, 50V and 60V The RFP4N05L and RFP4N06L are N-Channel enhancement rDS(ON) = 0.800 mode silicon gate power field effect transistors designed for Design Optimized for 5V Gate Drives applications such as switching regulators, switching conv

Otros transistores... IPI70R950CE , IPI05CN10N , SCT3060AR , 2SK2071-01S , FIR4N65AFG , MTM45N05E , MTP45N05E , SSS45N20B , IRF520 , RFP4N40 , 9N90L-T47 , CPC3701 , CPC3701C , CPC3703 , CPC3703C , CPC3710 , CPC3710C .