RFP4N35 Specs and Replacement
Type Designator: RFP4N35
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220AB
RFP4N35 substitution
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RFP4N35 datasheet
rfm4n35 rfm4n40 rfp4n35 rfp4n40.pdf
RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Features Power MOSFETs 4A, 350V and 400V [ /Title [ /Title These are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000 (RFM4N () power field effect transistors designed for applications such 35, Related Literature /Sub- as switchi... See More ⇒
rfp4n100 rf1s4n100sm.pdf
RFP4N100, RF1S4N100SM Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, High Voltage, Features N-Channel Power MOSFETs 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500 enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse) transistors. They are designed for use in applications such as switching regulators, switching conver... See More ⇒
rfp4n05l rfp4n06l.pdf
RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, Features N-Channel Power MOSFETs 4A, 50V and 60V The RFP4N05L and RFP4N06L are N-Channel enhancement rDS(ON) = 0.800 mode silicon gate power field effect transistors designed for Design Optimized for 5V Gate Drives applications such as switching regulators, switching conv... See More ⇒
Detailed specifications: IPI70R950CE, IPI05CN10N, SCT3060AR, 2SK2071-01S, FIR4N65AFG, MTM45N05E, MTP45N05E, SSS45N20B, IRF520, RFP4N40, 9N90L-T47, CPC3701, CPC3701C, CPC3703, CPC3703C, CPC3710, CPC3710C
Keywords - RFP4N35 MOSFET specs
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