RFP4N40 Todos los transistores

RFM4N35, RFM4N40, RFP4N35, RFP4N40 Semiconductor Data Sheet October 1998 File Number 1491.3 4A, 350V and 400V, 2.000 Ohm, N-Channel Features Power MOSFETs 4A, 350V and 400V [ /Title [ /Title These are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000 (RFM4N () power field effect transistors designed for applications such 35, Related Literature /Sub- as switchi

RFP4N100, RF1S4N100SM Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, High Voltage, Features N-Channel Power MOSFETs 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500 enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse) transistors. They are designed for use in applications such as switching regulators, switching conver

RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, Features N-Channel Power MOSFETs 4A, 50V and 60V The RFP4N05L and RFP4N06L are N-Channel enhancement rDS(ON) = 0.800 mode silicon gate power field effect transistors designed for Design Optimized for 5V Gate Drives applications such as switching regulators, switching conv