RFM4N35, RFM4N40, RFP4N35, RFP4N40SemiconductorData Sheet October 1998 File Number 1491.34A, 350V and 400V, 2.000 Ohm, N-Channel FeaturesPower MOSFETs 4A, 350V and 400V[ /Title[ /TitleThese are N-channel enhancement-mode silicon-gate rDS(ON) = 2.000(RFM4N()power field effect transistors designed for applications such35, Related Literature/Sub- as switchi

RFP4N100, RF1S4N100SMData Sheet January 20024.3A, 1000V, 3.500 Ohm, High Voltage, FeaturesN-Channel Power MOSFETs 4.3A, 1000VThe RFP4N100 and RFP4N100SM are N-Channel rDS(ON) = 3.500enhancement mode silicon gate power field effect UIS Rating Curve (Single Pulse)transistors. They are designed for use in applications such as switching regulators, switching conver

RFP4N05L, RFP4N06LData Sheet July 1999 File Number 2876.24A, 50V and 60V, 0.800 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 4A, 50V and 60VThe RFP4N05L and RFP4N06L are N-Channel enhancement rDS(ON) = 0.800mode silicon gate power field effect transistors designed for Design Optimized for 5V Gate Drivesapplications such as switching regulators, switchingconv