CPC3720 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CPC3720
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 350 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.13 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.6 V
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 22 Ohm
   Paquete / Cubierta: SOT-89

Búsqueda de reemplazo de MOSFET CPC3720

CPC3720 Datasheet (PDF)

..1. Size:105K ixys
cpc3720.pdf

CPC3720N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionThe CPC3720 is an N-channel, depletion mode, field BVDGX (max)effect transistor (FET) that utilizes Clares proprietary 350VP 22 130mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical

0.1. Size:106K ixys
cpc3720c.pdf

CPC3720N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionThe CPC3720 is an N-channel, depletion mode, field V(BR)DGX (max)effect transistor (FET) that utilizes Clares proprietary 350VP 22 130mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an econ

9.1. Size:97K ixys
cpc3703.pdf

CPC3703N-Channel Depletion-ModeVertical DMOS FETsBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

9.2. Size:124K ixys
cpc3714.pdf

CPC3714N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

9.3. Size:93K ixys
cpc3701.pdf

CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(ON) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

9.4. Size:124K ixys
cpc3714c.pdf

CPC3714N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance i

9.5. Size:149K ixys
cpc3703c.pdf

CPC3703CN-Channel Depletion-ModeVertical DMOS FETsDescriptionBVDSX/ RDS(ON) IDSS PackageBVDGX (max) (min)The CPC3703C is an N-channel depletion mode field250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clares proprietarythird generation vertical DMOS process. Thirdgeneration process realizes world class, high voltageMOSFET performance in an economical silic

9.6. Size:106K ixys
cpc3710c.pdf

CPC3710N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clares proprietary 250VP 10 220mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance

9.7. Size:106K ixys
cpc3710.pdf

CPC3710N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

9.8. Size:93K ixys
cpc3701c.pdf

CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

9.9. Size:105K ixys
cpc3730.pdf

CPC3730N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. Thethird-generation process realizes world class, high voltage MOSFET performance in an economical

9.10. Size:105K ixys
cpc3730c.pdf

CPC3730N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. Thethird-generation process realizes world class, high voltage MOSFET performance in an econom

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: