CPC3720 Specs and Replacement
Type Designator: CPC3720
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.13 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ -
Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 22 Ohm
Package: SOT-89
- MOSFET ⓘ Cross-Reference Search
CPC3720 datasheet
..1. Size:105K ixys
cpc3720.pdf 
CPC3720 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description The CPC3720 is an N-channel, depletion mode, field BVDGX (max) effect transistor (FET) that utilizes Clare s proprietary 350VP 22 130mA SOT-89 third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical ... See More ⇒
0.1. Size:106K ixys
cpc3720c.pdf
CPC3720 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description The CPC3720 is an N-channel, depletion mode, field V(BR)DGX (max) effect transistor (FET) that utilizes Clare s proprietary 350VP 22 130mA SOT-89 third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an econ... See More ⇒
9.1. Size:97K ixys
cpc3703.pdf
CPC3703 N-Channel Depletion-Mode Vertical DMOS FETs BVDSX/ RDS(ON) IDSS (min) Package Description BVDGX (max) The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e... See More ⇒
9.2. Size:124K ixys
cpc3714.pdf
CPC3714 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description BVDGX (max) The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e... See More ⇒
9.3. Size:93K ixys
cpc3701.pdf
CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V(BR)DSX / RDS(ON) IDSS (min) Package Description V(BR)DGX (max) The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an ... See More ⇒
9.4. Size:124K ixys
cpc3714c.pdf
CPC3714 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance i... See More ⇒
9.5. Size:149K ixys
cpc3703c.pdf
CPC3703C N-Channel Depletion-Mode Vertical DMOS FETs Description BVDSX/ RDS(ON) IDSS Package BVDGX (max) (min) The CPC3703C is an N-channel depletion mode field 250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silic... See More ⇒
9.6. Size:106K ixys
cpc3710c.pdf
CPC3710 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clare s proprietary 250VP 10 220mA SOT-89 third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance ... See More ⇒
9.7. Size:106K ixys
cpc3710.pdf
CPC3710 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(on) IDSS (min) Package Description BVDGX (max) The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Features voltage MOSFET performance in an e... See More ⇒
9.8. Size:93K ixys
cpc3701c.pdf
CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an ... See More ⇒
9.9. Size:105K ixys
cpc3730.pdf
CPC3730 N-Channel Depletion-Mode FET PRELIMINARY BVDSX/ RDS(ON) IDSS (min) Package Description BVDGX (max) The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical ... See More ⇒
9.10. Size:105K ixys
cpc3730c.pdf
CPC3730 N-Channel Depletion-Mode FET PRELIMINARY V(BR)DSX / RDS(on) IDSS (min) Package Description V(BR)DGX (max) The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89 effect transistor (FET) that utilizes Clare s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an econom... See More ⇒
Detailed specifications: CPC3701, CPC3701C, CPC3703, CPC3703C, CPC3710, CPC3710C, CPC3714, CPC3714C, IRF1405, CPC3720C, CPC3730, CPC3730C, CPC5602, CPC5602C, CPC5603, CPC5603C, CPH3324
Keywords - CPC3720 MOSFET specs
CPC3720 cross reference
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