CPC3730 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CPC3730N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. Thethird-generation process realizes world class, high voltage MOSFET performance in an economical

CPC3730N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. Thethird-generation process realizes world class, high voltage MOSFET performance in an econom

CPC3703N-Channel Depletion-ModeVertical DMOS FETsBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

CPC3714N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(ON) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

CPC3714N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance i

CPC3720N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionThe CPC3720 is an N-channel, depletion mode, field V(BR)DGX (max)effect transistor (FET) that utilizes Clares proprietary 350VP 22 130mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an econ

CPC3703CN-Channel Depletion-ModeVertical DMOS FETsDescriptionBVDSX/ RDS(ON) IDSS PackageBVDGX (max) (min)The CPC3703C is an N-channel depletion mode field250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clares proprietarythird generation vertical DMOS process. Thirdgeneration process realizes world class, high voltageMOSFET performance in an economical silic

CPC3710N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clares proprietary 250VP 10 220mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance

CPC3710N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e

CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an

CPC3720N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionThe CPC3720 is an N-channel, depletion mode, field BVDGX (max)effect transistor (FET) that utilizes Clares proprietary 350VP 22 130mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical