CPC3730 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CPC3730
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 350 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.14 A
Tjⓘ - Максимальная температура канала: 125 °C
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 20 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 30 Ohm
Тип корпуса: SOT-89
CPC3730 Datasheet (PDF)
cpc3730.pdf
CPC3730N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. Thethird-generation process realizes world class, high voltage MOSFET performance in an economical
cpc3730c.pdf
CPC3730N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3730 is an N-channel, depletion mode, field 350VP 30 140mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. Thethird-generation process realizes world class, high voltage MOSFET performance in an econom
cpc3703.pdf
CPC3703N-Channel Depletion-ModeVertical DMOS FETsBVDSX/ RDS(ON) IDSS (min) Package DescriptionBVDGX (max)The CPC3703 is an N-channel, depletion mode, field 250V 4 360mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
cpc3714.pdf
CPC3714N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
cpc3701.pdf
CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(ON) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an
cpc3714c.pdf
CPC3714N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3714 is an N-channel, depletion-mode, field 350VP 14 240mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance i
cpc3720c.pdf
CPC3720N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionThe CPC3720 is an N-channel, depletion mode, field V(BR)DGX (max)effect transistor (FET) that utilizes Clares proprietary 350VP 22 130mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an econ
cpc3703c.pdf
CPC3703CN-Channel Depletion-ModeVertical DMOS FETsDescriptionBVDSX/ RDS(ON) IDSS PackageBVDGX (max) (min)The CPC3703C is an N-channel depletion mode field250V 4.0 300mA SOT-89 effect transistor (FET) that utilizes Clares proprietarythird generation vertical DMOS process. Thirdgeneration process realizes world class, high voltageMOSFET performance in an economical silic
cpc3710c.pdf
CPC3710N-Channel Depletion-Mode FETPRELIMINARYV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3710 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes Clares proprietary 250VP 10 220mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance
cpc3710.pdf
CPC3710N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionBVDGX (max)The CPC3710 is an N-channel, depletion-mode, field 250VP 10 220mA SOT-89effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high Featuresvoltage MOSFET performance in an e
cpc3701c.pdf
CPC370160V, Depletion-Mode, N-ChannelVertical DMOS FETV(BR)DSX / RDS(on) IDSS (min) Package DescriptionV(BR)DGX (max)The CPC3701 is an N-channel, depletion mode, field 60V 1 600mA SOT-89 effect transistor (FET) that utilizes Clares proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an
cpc3720.pdf
CPC3720N-Channel Depletion-Mode FETPRELIMINARYBVDSX/ RDS(on) IDSS (min) Package DescriptionThe CPC3720 is an N-channel, depletion mode, field BVDGX (max)effect transistor (FET) that utilizes Clares proprietary 350VP 22 130mA SOT-89third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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