CPC5602C Todos los transistores

 

CPC5602C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CPC5602C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 350 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.13 A
   Tjⓘ - Temperatura máxima de unión: 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm
   Paquete / Cubierta: SOT-223
 

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CPC5602C Datasheet (PDF)

 ..1. Size:105K  ixys
 cpc5602c.pdf pdf_icon

CPC5602C

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

 7.1. Size:106K  ixys
 cpc5602.pdf pdf_icon

CPC5602C

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

 8.1. Size:106K  ixys
 cpc5603.pdf pdf_icon

CPC5602C

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

 8.2. Size:106K  ixys
 cpc5603c.pdf pdf_icon

CPC5602C

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

MOSTRAR MÁS

Otros transistores... CPC3710C , CPC3714 , CPC3714C , CPC3720 , CPC3720C , CPC3730 , CPC3730C , CPC5602 , EMB04N03H , CPC5603 , CPC5603C , CPH3324 , CPH3327 , CPH3340 , CPH3341 , CPH3362 , CPH3427 .

History: STP423S | NTMFS5C612NLT1G | APM2318A

 

 
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