Справочник MOSFET. CPC5602C

 

CPC5602C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CPC5602C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 350 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.13 A
   Tjⓘ - Максимальная температура канала: 85 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 14 Ohm
   Тип корпуса: SOT-223
     - подбор MOSFET транзистора по параметрам

 

CPC5602C Datasheet (PDF)

 ..1. Size:105K  ixys
 cpc5602c.pdf pdf_icon

CPC5602C

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

 7.1. Size:106K  ixys
 cpc5602.pdf pdf_icon

CPC5602C

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

 8.1. Size:106K  ixys
 cpc5603.pdf pdf_icon

CPC5602C

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

 8.2. Size:106K  ixys
 cpc5603c.pdf pdf_icon

CPC5602C

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

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History: TPU60R530M | DG840 | FDPF8N50NZU | SDF120JDA-D | IRLU3715 | KNB1906A | DMT10H009LCG

 

 
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