CPC5603C Todos los transistores

 

CPC5603C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CPC5603C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 415 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.13 A
   Tjⓘ - Temperatura máxima de unión: 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm
   Paquete / Cubierta: SOT-223
     - Selección de transistores por parámetros

 

CPC5603C Datasheet (PDF)

 ..1. Size:106K  ixys
 cpc5603c.pdf pdf_icon

CPC5603C

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

 7.1. Size:106K  ixys
 cpc5603.pdf pdf_icon

CPC5603C

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

 8.1. Size:105K  ixys
 cpc5602c.pdf pdf_icon

CPC5603C

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

 8.2. Size:106K  ixys
 cpc5602.pdf pdf_icon

CPC5603C

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP98T03GP | HCS80R1K4ST

 

 
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