Справочник MOSFET. CPC5603C

 

CPC5603C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CPC5603C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 415 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.13 A
   Tj ⓘ - Максимальная температура канала: 85 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 14 Ohm
   Тип корпуса: SOT-223
 

 Аналог (замена) для CPC5603C

   - подбор ⓘ MOSFET транзистора по параметрам

 

CPC5603C Datasheet (PDF)

 ..1. Size:106K  ixys
cpc5603c.pdfpdf_icon

CPC5603C

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

 7.1. Size:106K  ixys
cpc5603.pdfpdf_icon

CPC5603C

CPC5603N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 415 VThe CPC5603 is an N-channel, depletion mode Field Max On-Resistance - RDS(on) 14Effect Transistor (FET) that utilizes Clares proprietary Max Power 2.5 Wthird-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET pe

 8.1. Size:105K  ixys
cpc5602c.pdfpdf_icon

CPC5603C

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

 8.2. Size:106K  ixys
cpc5602.pdfpdf_icon

CPC5603C

CPC5602N-Channel Depletion Mode FETParameter Rating Units DescriptionDrain-to-Source Voltage - VDS 350 V The CPC5602 is an N-channel depletion mode Field Effect Transistor (FET) that utilizes Clares proprietary Max On-Resistance - RDS(on) 14third generation vertical DMOS process. The third Max Power 2.5 Wgeneration process realizes world class, high voltage MOSFET perf

Другие MOSFET... CPC3714C , CPC3720 , CPC3720C , CPC3730 , CPC3730C , CPC5602 , CPC5602C , CPC5603 , 8N60 , CPH3324 , CPH3327 , CPH3340 , CPH3341 , CPH3362 , CPH3427 , CPH3430 , CPH3442 .

History: FDN371N | IRF7754G | CS4905S | KU035N06P | KIA2301 | SQ2319ADS

 

 
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