CPH3327 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH3327
Código: YC
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1.2 V
Tiempo de subida (tr): 2.7 nS
Conductancia de drenaje-sustrato (Cd): 16 pF
Resistencia entre drenaje y fuente RDS(on): 1.45 Ohm
Paquete / Cubierta: CPH3
Búsqueda de reemplazo de MOSFET CPH3327
CPH3327 Datasheet (PDF)
cph3327.pdf
Ordering number : ENN7914 CPH3327P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3327ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --0.6
cph3324.pdf
Ordering number : ENN8024 CPH3324P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3324ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --1.2 A
cph3356.pdf
CPH3356Ordering number : ENA1124SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3356ApplicationsFeatures 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 1
cph3350.pdf
CPH3350Ordering number : ENA0151SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3350ApplicationsFeatures Ultrahigh-speed switching 1.8V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VG
cph3360.pdf
CPH3360Ordering number : ENA0114SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3360ApplicationsFeatures ON-resistance RDS(on)1=233m (typ.) 4V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sourc
cph3304.pdf
Ordering number:EN5987P-Channel MOS Silicon FETCPH3304Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152 4V drive.[CPH3304]2.90.150.430 to 0.11 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions R
cph3355.pdf
CPH3355Ordering number : ENA1905SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3355ApplicationsFeatures ON-resistance RDS(on)1=120m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sou
cph3306.pdf
Ordering number:EN6438P-Channel Silicon MOSFETCPH3306Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152A 4V drive.[CPH3306]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratin
cph3348.pdf
Ordering number : ENA0922 CPH3348SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3348ApplicationsFeatures Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)
cph3317.pdf
Ordering number : ENN7121CPH3317P-Channel Silicon MOSFETCPH3317Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3317]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond
cph3314.pdf
Ordering number : ENN6909CPH3314P-Channel Silicon MOSFETCPH3314Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 4V drive.[CPH3314]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSpecificationsSANYO : CPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Condit
cph3313.pdf
Ordering number : ENN6925CPH3313P-Channel Silicon MOSFETCPH3313Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3313]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSpecificationsSANYO : CPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Cond
cph3303.pdf
Ordering number:EN5988P-Channel MOS Silicon FETCPH3303Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152 2.5V drive.[CPH3303]2.90.150.430 to 0.11 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions
cph3340.pdf
Ordering number : ENA0090A CPH3340SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3340ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS
cph3318.pdf
Ordering number : ENN7122CPH3318P-Channel Silicon MOSFETCPH3318Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 4V drive.[CPH3318]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condit
cph3351.pdf
CPH3351Ordering number : ENA1880SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3351ApplicationsFeatures ON-resistance RDS(on)1=190m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Sou
cph3305.pdf
Ordering number:ENN6426P-Channel Silicon MOSFETCPH3305Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152A 4V drive.[CPH3305]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rati
cph3341.pdf
Ordering number : ENA0091 CPH3341P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3341ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --5 A
cph3308.pdf
Ordering number : ENN7075CPH3308P-Channel Silicon MOSFETCPH3308Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 4V drive.[CPH3308]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condit
cph3310.pdf
Ordering number : ENN6776CPH3310P-Channel Silicon MOSFETCPH3310 Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3310]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSpecifications SANYO : CPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Cond
cph3307.pdf
Ordering number : ENN6996CPH3307P-Channel Silicon MOSFETCPH3307Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3307]2.90.150.430.051 21.9 1 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condi
cph3362.pdf
Ordering number : ENA2321A CPH3362 Power MOSFET http://onsemi.com 100V, 1.7, 0.7A, Single P-Channel Features On-resistance RDS(on)1=1.3 (typ) Halogen free compliance 4V drive Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain
cph3351.pdf
CPH3351 Power MOSFET www.onsemi.com -60V, 250m, -1.8A, Single P-ChannelVDSS RDS(on) Max ID MaxFeatures 250m@ -10V Low On-Resistance -60V 330m@ -4.5V -1.8A 4V Drive 350m@ -4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications P-Channel Absolute Maximum Ratings at Ta = 25C 3Param
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