CPH3327 - описание и поиск аналогов

Ordering number ENN7914 CPH3327 P-Channel Silicon MOSFET General-Purpose Switching Device CPH3327 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --0.6

Ordering number ENN8024 CPH3324 P-Channel Silicon MOSFET General-Purpose Switching Device CPH3324 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --1.2 A

CPH3356 Ordering number ENA1124 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3356 Applications Features 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 1

CPH3350 Ordering number ENA0151 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3350 Applications Features Ultrahigh-speed switching 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VG

CPH3360 Ordering number ENA0114 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3360 Applications Features ON-resistance RDS(on)1=233m (typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sourc

Ordering number EN5987 P-Channel MOS Silicon FET CPH3304 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152 4V drive. [CPH3304] 2.9 0.15 0.4 3 0 to 0.1 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions R

CPH3355 Ordering number ENA1905 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3355 Applications Features ON-resistance RDS(on)1=120m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sou

Ordering number EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3306] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratin

Ordering number ENA0922 CPH3348 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3348 Applications Features Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC)

Ordering number ENN7121 CPH3317 P-Channel Silicon MOSFET CPH3317 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3317] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond

Ordering number ENN6909 CPH3314 P-Channel Silicon MOSFET CPH3314 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3314] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit

Ordering number ENN6925 CPH3313 P-Channel Silicon MOSFET CPH3313 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3313] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond

Ordering number EN5988 P-Channel MOS Silicon FET CPH3303 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152 2.5V drive. [CPH3303] 2.9 0.15 0.4 3 0 to 0.1 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions

Ordering number ENA0090A CPH3340 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3340 Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS

Ordering number ENN7122 CPH3318 P-Channel Silicon MOSFET CPH3318 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3318] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit

CPH3351 Ordering number ENA1880 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH3351 Applications Features ON-resistance RDS(on)1=190m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Sou

Ordering number ENN6426 P-Channel Silicon MOSFET CPH3305 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3305] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rati

Ordering number ENA0091 CPH3341 P-Channel Silicon MOSFET General-Purpose Switching Device CPH3341 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --5 A

Ordering number ENN7075 CPH3308 P-Channel Silicon MOSFET CPH3308 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3308] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit

Ordering number ENN6776 CPH3310 P-Channel Silicon MOSFET CPH3310 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3310] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond

Ordering number ENN6996 CPH3307 P-Channel Silicon MOSFET CPH3307 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3307] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi

Ordering number ENA2321A CPH3362 Power MOSFET http //onsemi.com 100V, 1.7 , 0.7A, Single P-Channel Features On-resistance RDS(on)1=1.3 (typ) Halogen free compliance 4V drive Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain

CPH3351 Power MOSFET www.onsemi.com -60V, 250m , -1.8A, Single P-Channel VDSS RDS(on) Max ID Max Features 250m @ -10V Low On-Resistance -60V 330m @ -4.5V -1.8A 4V Drive 350m @ -4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications P-Channel Absolute Maximum Ratings at Ta = 25 C 3 Param