CPH6311 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CPH6311
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.6 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tiempo de subida (tr): 100 nS
   Conductancia de drenaje-sustrato (Cd): 200 pF
   Resistencia entre drenaje y fuente RDS(on): 0.042 Ohm
   Paquete / Cubierta: CPH6

Búsqueda de reemplazo de MOSFET CPH6311

CPH6311 Datasheet (PDF)

..1. Size:48K sanyo
cph6311.pdf

Ordering number : EN6794A CPH6311SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6311ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

8.1. Size:29K sanyo
cph6313.pdf

Ordering number : ENN7017CPH6313P-Channel Silicon MOSFETCPH6313High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 2.5V drive.[CPH6315]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at

8.2. Size:30K sanyo
cph6319.pdf

Ordering number : ENN7182CPH6319P-Channel Silicon MOSFETCPH6319High-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 1.8V drive.[CPH6319]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum

8.3. Size:28K sanyo
cph6315.pdf

Ordering number : ENN7018CPH6315P-Channel Silicon MOSFETCPH6315High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 2.5V drive.[CPH6315]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at

8.4. Size:29K sanyo
cph6318.pdf

Ordering number : ENN7212CPH6318P-Channel Silicon MOSFETCPH6318High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 1.8V drive.[CPH6318]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at T

8.5. Size:29K sanyo
cph6316.pdf

Ordering number : ENN7026CPH6316P-Channel Silicon MOSFETCPH6316High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 4V drive.[CPH6316]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at Ta

8.6. Size:30K sanyo
cph6312.pdf

Ordering number : ENN6934CPH6312P-Channel Silicon MOSFETCPH6312High-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 4V drive.[CPH6312]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsAbsolute Maximum Ratings at Ta=2

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