CPH6311 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CPH6311
   Código: JM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
   Qgⓘ - Carga de la puerta: 31 nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: CPH6

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CPH6311 Datasheet (PDF)

..1. Size:48K sanyo
cph6311.pdf

Ordering number : EN6794A CPH6311SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6311ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

8.1. Size:29K sanyo
cph6313.pdf

Ordering number : ENN7017CPH6313P-Channel Silicon MOSFETCPH6313High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 2.5V drive.[CPH6315]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at

8.2. Size:30K sanyo
cph6319.pdf

Ordering number : ENN7182CPH6319P-Channel Silicon MOSFETCPH6319High-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 1.8V drive.[CPH6319]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum

8.3. Size:28K sanyo
cph6315.pdf

Ordering number : ENN7018CPH6315P-Channel Silicon MOSFETCPH6315High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 2.5V drive.[CPH6315]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at

8.4. Size:29K sanyo
cph6318.pdf

Ordering number : ENN7212CPH6318P-Channel Silicon MOSFETCPH6318High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 1.8V drive.[CPH6318]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at T

8.5. Size:29K sanyo
cph6316.pdf

Ordering number : ENN7026CPH6316P-Channel Silicon MOSFETCPH6316High-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 4V drive.[CPH6316]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at Ta

8.6. Size:30K sanyo
cph6312.pdf

Ordering number : ENN6934CPH6312P-Channel Silicon MOSFETCPH6312High-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm High-speed switching. 2151A 4V drive.[CPH6312]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsAbsolute Maximum Ratings at Ta=2

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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