CPH6311 Datasheet. Specs and Replacement

Type Designator: CPH6311

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: CPH6

CPH6311 substitution

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CPH6311 datasheet

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CPH6311

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CPH6311

Ordering number ENN7017 CPH6313 P-Channel Silicon MOSFET CPH6313 High-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 2.5V drive. [CPH6315] 0.15 2.9 5 6 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum Ratings at ... See More ⇒

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cph6319.pdf pdf_icon

CPH6311

Ordering number ENN7182 CPH6319 P-Channel Silicon MOSFET CPH6319 High-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 1.8V drive. [CPH6319] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum... See More ⇒

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CPH6311

Ordering number ENN7018 CPH6315 P-Channel Silicon MOSFET CPH6315 High-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 2.5V drive. [CPH6315] 0.15 2.9 5 6 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum Ratings at ... See More ⇒

Detailed specifications: CPH3427, CPH3430, CPH3442, CPH3459, CPH3461, CPH3462, CPH5852, CPH5871, IRF740, CPH6411, CPH6429, CPH6434, CPH6635, CPH6636R, CPMF-1200-S080B, CPMF-1200-S160B, CPT2301

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