N0602N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: N0602N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 156 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 560 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
Encapsulados: TO-220
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N0602N datasheet
n0602n.pdf
Preliminary Data Sheet R07DS0558EJ0100 N0602N Rev.1.00 Nov 07, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on = 4.6 m MAX. (VGS = 10 V, ID = 50 A) ) Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
rej03g1130 h7n0602ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0068 h7n0602ab.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... CPH6635, CPH6636R, CPMF-1200-S080B, CPMF-1200-S160B, CPT2301, N0434N, N0439N, N0601N, IRF640N, N0603N, N0604N, N2500N, NCE15H15T, NCV8401A, NCV8401ADTRKG, NCV8401DTRKG, NCV8402A
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