NCV8402ASTT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCV8402ASTT1G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 8.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 42 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 14 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: SOT-223

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NCV8402ASTT1G datasheet

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NCV8402ASTT1G

NCV8402, NCV8402A Self-Protected Low Side Driver with Temperature and Current Limit NCV8402/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, www.onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS automotive environm

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NCV8402ASTT1G

NCV8402D, NCV8402AD Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D/AD is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suita

 7.1. Size:152K  onsemi
 ncv8402.pdf pdf_icon

NCV8402ASTT1G

NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clampe

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NCV8402ASTT1G

NCV8402D Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suitable for harsh

MOSTRAR MÁS

Otros transistores... N0604N, N2500N, NCE15H15T, NCV8401A, NCV8401ADTRKG, NCV8401DTRKG, NCV8402A, NCV8402AD, 8205A, NCV8403A, NCV8405A, NCV8406A, NCV8408, NCV8440A, NDB410AE, NDB410B, NDB410BE