NCV8402ASTT1G Datasheet. Specs and Replacement

Type Designator: NCV8402ASTT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 42 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SOT-223

NCV8402ASTT1G substitution

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NCV8402ASTT1G datasheet

 ..1. Size:92K  onsemi
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NCV8402ASTT1G

NCV8402, NCV8402A Self-Protected Low Side Driver with Temperature and Current Limit NCV8402/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, www.onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS automotive environm... See More ⇒

 6.1. Size:118K  onsemi
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NCV8402ASTT1G

NCV8402D, NCV8402AD Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D/AD is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suita... See More ⇒

 7.1. Size:152K  onsemi
ncv8402.pdf pdf_icon

NCV8402ASTT1G

NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clampe... See More ⇒

 7.2. Size:147K  onsemi
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NCV8402ASTT1G

NCV8402D Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suitable for harsh ... See More ⇒

Detailed specifications: N0604N, N2500N, NCE15H15T, NCV8401A, NCV8401ADTRKG, NCV8401DTRKG, NCV8402A, NCV8402AD, 8205A, NCV8403A, NCV8405A, NCV8406A, NCV8408, NCV8440A, NDB410AE, NDB410B, NDB410BE

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.