NDD03N80Z Todos los transistores

 

NDD03N80Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDD03N80Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 52 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: DPAK IPAK
 

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NDD03N80Z Datasheet (PDF)

 ..1. Size:114K  onsemi
ndd03n80z.pdf pdf_icon

NDD03N80Z

NDD03N80ZNChannel Power MOSFET800 V, 4.5 WFeatures ESD Diode-Protected Gate 100% Avalanche Testedhttp://onsemi.com 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAXCompliant800 V 4.5 W @ 10 VABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol Value UnitN-ChannelDrain-to-Source Volta

 8.1. Size:162K  onsemi
ndf03n60z ndp03n60z ndd03n60z.pdf pdf_icon

NDD03N80Z

NDF03N60Z, NDP03N60Z,NDD03N60ZN-Channel Power MOSFET600 V, 3.3 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant600 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source V

 8.2. Size:118K  onsemi
ndd03n40z.pdf pdf_icon

NDD03N80Z

NDD03N40Z, NDT03N40ZN-Channel Power MOSFET400 V, 3.4 WFeatures 100% Avalanche Tested Extremely High dv/dt Capabilityhttp://onsemi.com Gate Charge Minimized Very Low Intrinsic CapacitanceV(BR)DSS RDS(ON) MAX Improved Diode Reverse Recovery Characteristics Zener-protected400 V 3.4 W @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 8.3. Size:119K  onsemi
ndd03n50z.pdf pdf_icon

NDD03N80Z

NDD03N50ZN-Channel Power MOSFET500 V, 3.3 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant500 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol Value Unit

Otros transistores... NDB710BE , NDBA070N10B , NDBA100N10B , NDBA170N06A , NDBA180N10B , NDD01N60 , NDD02N40 , NDD03N40Z , IRFP450 , NDD60N360U1 , NDD60N550U1 , NDD60N745U1 , NDD60N900U1 , NDDL01N60Z , NDDP010N25AZ , NDFP03N150C , NDFP03N150CG .

History: SST202 | NCE85H21TC

 

 
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