NDD03N80Z Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDD03N80Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 52 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm

Encapsulados: DPAK IPAK

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NDD03N80Z datasheet

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 ndd03n80z.pdf pdf_icon

NDD03N80Z

NDD03N80Z N Channel Power MOSFET 800 V, 4.5 W Features ESD Diode-Protected Gate 100% Avalanche Tested http //onsemi.com 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX Compliant 800 V 4.5 W @ 10 V ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol Value Unit N-Channel Drain-to-Source Volta

 8.1. Size:162K  onsemi
 ndf03n60z ndp03n60z ndd03n60z.pdf pdf_icon

NDD03N80Z

NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant 600 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP NDD Unit N-Channel D (2) Drain-to-Source V

 8.2. Size:118K  onsemi
 ndd03n40z.pdf pdf_icon

NDD03N80Z

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features 100% Avalanche Tested Extremely High dv/dt Capability http //onsemi.com Gate Charge Minimized Very Low Intrinsic Capacitance V(BR)DSS RDS(ON) MAX Improved Diode Reverse Recovery Characteristics Zener-protected 400 V 3.4 W @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 8.3. Size:119K  onsemi
 ndd03n50z.pdf pdf_icon

NDD03N80Z

NDD03N50Z N-Channel Power MOSFET 500 V, 3.3 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 500 V 3.3 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Rating Symbol Value Unit

MOSTRAR MÁS

Otros transistores... NDB710BE, NDBA070N10B, NDBA100N10B, NDBA170N06A, NDBA180N10B, NDD01N60, NDD02N40, NDD03N40Z, NCEP15T14, NDD60N360U1, NDD60N550U1, NDD60N745U1, NDD60N900U1, NDDL01N60Z, NDDP010N25AZ, NDFP03N150C, NDFP03N150CG