Справочник MOSFET. NDD03N80Z

 

NDD03N80Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NDD03N80Z
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 52 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
   Тип корпуса: DPAK IPAK

 Аналог (замена) для NDD03N80Z

 

 

NDD03N80Z Datasheet (PDF)

 ..1. Size:114K  onsemi
 ndd03n80z.pdf

NDD03N80Z NDD03N80Z

NDD03N80ZNChannel Power MOSFET800 V, 4.5 WFeatures ESD Diode-Protected Gate 100% Avalanche Testedhttp://onsemi.com 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAXCompliant800 V 4.5 W @ 10 VABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol Value UnitN-ChannelDrain-to-Source Volta

 8.1. Size:162K  onsemi
 ndf03n60z ndp03n60z ndd03n60z.pdf

NDD03N80Z NDD03N80Z

NDF03N60Z, NDP03N60Z,NDD03N60ZN-Channel Power MOSFET600 V, 3.3 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 1.2 A These Devices are Pb-Free and are RoHS Compliant600 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source V

 8.2. Size:118K  onsemi
 ndd03n40z.pdf

NDD03N80Z NDD03N80Z

NDD03N40Z, NDT03N40ZN-Channel Power MOSFET400 V, 3.4 WFeatures 100% Avalanche Tested Extremely High dv/dt Capabilityhttp://onsemi.com Gate Charge Minimized Very Low Intrinsic CapacitanceV(BR)DSS RDS(ON) MAX Improved Diode Reverse Recovery Characteristics Zener-protected400 V 3.4 W @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

 8.3. Size:119K  onsemi
 ndd03n50z.pdf

NDD03N80Z NDD03N80Z

NDD03N50ZN-Channel Power MOSFET500 V, 3.3 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(on) (MAX) @ 1.15 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant500 V3.3 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol Value Unit

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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