NDD60N745U1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDD60N745U1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 84 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 6.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.745 Ohm

Encapsulados: DPAK IPAK

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NDD60N745U1 datasheet

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 ndd60n745u1.pdf pdf_icon

NDD60N745U1

NDD60N745U1 N-Channel Power MOSFET 600 V, 745 mW Features 100% Avalanche Tested http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 745 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V

 8.1. Size:129K  onsemi
 ndd60n550u1.pdf pdf_icon

NDD60N745U1

NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 600 V 550 mW @ 10 V Parameter Symbol NDD Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS 25 V N-Channel

 8.2. Size:130K  onsemi
 ndd60n360u1.pdf pdf_icon

NDD60N745U1

NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol NDD Unit 600 V 360 mW @ 10 V Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGS 25 V N-Channel

 8.3. Size:128K  onsemi
 ndd60n900u1.pdf pdf_icon

NDD60N745U1

NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features 100% Avalanche Tested http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX 600 V 900 mW @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Gate-to-Source V

MOSTRAR MÁS

Otros transistores... NDBA170N06A, NDBA180N10B, NDD01N60, NDD02N40, NDD03N40Z, NDD03N80Z, NDD60N360U1, NDD60N550U1, NCEP15T14, NDD60N900U1, NDDL01N60Z, NDDP010N25AZ, NDFP03N150C, NDFP03N150CG, NDFPD1N150C, NDFPD1N150CG, NDP410AE