NDS352P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

March 1996NDS352P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode power -0.85A, -20V. RDS(ON) = 0.5 @ VGS = -4.5V.field effect transistors are produced using Fairchild'sProprietary package design using copper lead frame forproprietary, high cell density, DMOS technology. Thissuperior therma

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETP-Channel MOSFETNDS352AP (KDS352AP)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-0.9 A (VGS =-4.5V) RDS(ON) 0.3 (VGS =-10V)1 2+0.02+0.10.15 -0.02D 0.95 -0.1 RDS(ON) 0.5 (VGS =-4.5V)1.9+0.1-0.21.Gate2.SourceG S3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ra

NDS352APwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23