NDS352P Datasheet. Equivalente

 ..1. Size:62K  fairchild semi
 nds352p.pdf

March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power -0.85A, -20V. RDS(ON) = 0.5 @ VGS = -4.5V. field effect transistors are produced using Fairchild's Proprietary package design using copper lead frame for proprietary, high cell density, DMOS technology. This superior therma

 8.1. Size:202K  onsemi
 nds352ap.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.2. Size:1668K  kexin
 nds352ap.pdf

SMD Type MOSFET P-Channel MOSFET NDS352AP (KDS352AP) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-30V ID =-0.9 A (VGS =-4.5V) RDS(ON) 0.3 (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 D 0.95 -0.1 RDS(ON) 0.5 (VGS =-4.5V) 1.9+0.1 -0.2 1.Gate 2.Source G S 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

 8.3. Size:849K  cn vbsemi
 nds352ap.pdf

NDS352AP www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23