NID9N05ACLT4G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NID9N05ACLT4G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 52 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 500 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.181 Ohm

Encapsulados: DPAK

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NID9N05ACLT4G datasheet

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NID9N05ACLT4G

NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http //onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection -

 4.1. Size:82K  onsemi
 nid9n05acl nid9n05bcl.pdf pdf_icon

NID9N05ACLT4G

NID9N05ACL, NID9N05BCL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package www.onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection - HB

 7.1. Size:113K  onsemi
 nid9n05clt4g.pdf pdf_icon

NID9N05ACLT4G

NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http //onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection -

 7.2. Size:150K  onsemi
 nid9n05cl.pdf pdf_icon

NID9N05ACLT4G

NID9N05CL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http //onsemi.com Benefits VDSS ID MAX High Energy Capability for Inductive Loads (Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation 52 V 90 mW 9.0 A Features Drain Diode Clamp Between Gate and Source (Pins 2, 4) ESD Protection - HBM 5000 V

MOSTRAR MÁS

Otros transistores... NDT01N60, NDT02N40, NDTL03N150C, NDTL03N150CG, NDUL03N150C, NDUL03N150CG, NDUL09N150C, NDUL09N150CG, 20N60, NID9N05CLT4G, NILMS4501NR2, NILMS4501NR2G, NMSD200B01-7, NP100N04MDH, NP100N04MUH, NP100N04NDH, NP100N04NUH