All MOSFET. NID9N05ACLT4G Datasheet

 

NID9N05ACLT4G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NID9N05ACLT4G
   Marking Code: 05ACL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 52 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 500 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.181 Ohm
   Package: DPAK

 NID9N05ACLT4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NID9N05ACLT4G Datasheet (PDF)

 ..1. Size:113K  onsemi
 nid9n05acl nid9n05aclt4g.pdf

NID9N05ACLT4G NID9N05ACLT4G

NID9N05CL, NID9N05ACLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagehttp://onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection -

 4.1. Size:82K  onsemi
 nid9n05acl nid9n05bcl.pdf

NID9N05ACLT4G NID9N05ACLT4G

NID9N05ACL, NID9N05BCLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagewww.onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection - HB

 7.1. Size:113K  onsemi
 nid9n05clt4g.pdf

NID9N05ACLT4G NID9N05ACLT4G

NID9N05CL, NID9N05ACLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagehttp://onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection -

 7.2. Size:150K  onsemi
 nid9n05cl.pdf

NID9N05ACLT4G NID9N05ACLT4G

NID9N05CLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagehttp://onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection - HBM 5000 V

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History: IRFP252

 

 
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