All MOSFET. NID9N05ACLT4G Datasheet

 

NID9N05ACLT4G Datasheet and Replacement


   Type Designator: NID9N05ACLT4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 52 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 500 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.181 Ohm
   Package: DPAK
 

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NID9N05ACLT4G Datasheet (PDF)

 ..1. Size:113K  onsemi
 nid9n05acl nid9n05aclt4g.pdf pdf_icon

NID9N05ACLT4G

NID9N05CL, NID9N05ACLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagehttp://onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection -

 4.1. Size:82K  onsemi
 nid9n05acl nid9n05bcl.pdf pdf_icon

NID9N05ACLT4G

NID9N05ACL, NID9N05BCLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagewww.onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection - HB

 7.1. Size:113K  onsemi
 nid9n05clt4g.pdf pdf_icon

NID9N05ACLT4G

NID9N05CL, NID9N05ACLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagehttp://onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection -

 7.2. Size:150K  onsemi
 nid9n05cl.pdf pdf_icon

NID9N05ACLT4G

NID9N05CLPower MOSFET9.0 A, 52 V, N-Channel, Logic Level,Clamped MOSFET w/ESD Protectionin a DPAK Packagehttp://onsemi.comBenefitsVDSS ID MAX High Energy Capability for Inductive Loads(Clamped) RDS(ON) TYP (Limited) Low Switching Noise Generation52 V90 mW 9.0 AFeaturesDrain Diode Clamp Between Gate and Source(Pins 2, 4) ESD Protection - HBM 5000 V

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Datasheet: NDT01N60 , NDT02N40 , NDTL03N150C , NDTL03N150CG , NDUL03N150C , NDUL03N150CG , NDUL09N150C , NDUL09N150CG , 20N60 , NID9N05CLT4G , NILMS4501NR2 , NILMS4501NR2G , NMSD200B01-7 , NP100N04MDH , NP100N04MUH , NP100N04NDH , NP100N04NUH .

History: MTB90P06Q8 | IRFIZ14A | OSG60R340DT3F | STP60N05-14 | MTBA5N10J3 | OSG60R360FSF | OSG65R380DF

Keywords - NID9N05ACLT4G MOSFET datasheet

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