NP100N055PDH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NP100N055PDH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 288 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm
Paquete / Cubierta: TO-263
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NP100N055PDH Datasheet (PDF)
np100n055mdh np100n055ndh np100n055pdh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np100n055muh np100n055nuh np100n055puh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np100n055puk.pdf
Preliminary Data Sheet NP100N055PUK R07DS0589EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) Designed for
np100n04puk.pdf
Preliminary Data Sheet NP100N04PUK R07DS0545EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Sep 23, 2011Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) Designed for
np100n04mdh np100n04ndh np100n04pdh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np100n04nuj.pdf
Preliminary Data Sheet NP100N04NUJ R07DS0364EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jun 13, 2011Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.0 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) H
np100n04muh np100n04nuh np100n04puh.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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